IRF1010N
Производитель: IR
Модель: IRF1010N
SKU (Артикул): 47494
Тип корпуса: TO-220AB
Бонусные баллы: 1
Наличие: 0
Цена:
29.00 руб
Количество:
У этого товара есть аналог. 75 A, 55 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
MOSFET, N, 55V, 72A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:68A; Resistance, Rds On:0.0125ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:270A; Pin Format:1 g; 2 d/tab; 3 s; Pins, No. of:3; Pitch, Lead:2.54mm; Power Dissipation:115W; Power, Pd:115W; Resistance, Rds on @ Vgs = 10V:0.011ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.2°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
MOSFET, N, 55V, 72A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:55V; Current, Id Cont:68A; Resistance, Rds On:0.0125ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:270A; Pin Format:1 g; 2 d/tab; 3 s; Pins, No. of:3; Pitch, Lead:2.54mm; Power Dissipation:115W; Power, Pd:115W; Resistance, Rds on @ Vgs = 10V:0.011ohm; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:1.2°C/W; Transistors, No. of:1; Voltage, Vds Max:55V
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